| PART |
Description |
Maker |
| MPXHZ6117AC6T1 MPXHZ6117AC6U MPXHZ6117A MPXHZ6117A |
Media Resistant Integrated Silicon Pressure Sensor for Measuring Absolute Pressure,On-Chip Signal Conditioned,Temperature Compensated and Calibrated
|
Freescale Semiconductor, Inc
|
| 009-0631-900 009-0933-900 009-0089-900 009-0172-90 |
High-performance media resistant soleniod valves
|
Sensortechnics GmbH
|
| MPXHZ6400AC6T1 MPXHZ6400A |
Media Resistant and High Temperature Accuracy Intergrated Silicon Pressure Sensor
|
Freescale (Motorola)
FREESCALE[Freescale Semiconductor, Inc]
|
| MPXHZ6130A10 MPXHZ6130A MPXHZ6130A6U MPXHZ6130AC6U |
Media Resistant and High Silicon Pressure Sensor for Measuring Absolute Pressure
|
Freescale Semiconductor, Inc
|
| USB2227-AHZS-XX USB2227-NU-05 USB222706 USB2228-AH |
4th Generation USB2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC[SMSC Corporation]
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| USB2229-NU-02 USB2229-NE-02 USB2230-NE-02 USB2229- |
5th Generation Hi-Speed USB Flash Media and IrDA Controller with Integrated Card Power FETs FLASH MEMORY DRIVE CONTROLLER, PQFP128
|
SMSC Corporation
SMSC, Corp.
|
| AT76C503A 1949S |
From old datasheet system
Universal Serial Bus 11-megabit WLAN Media Access Controller
AT76C503A single-chip MAC with ARM7TDMIRISC processor, integrated 6K x 32-bit Internal SRAM, 128 pin, TQFP Package, 3.3V operation.
|
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| FSYA254R4 FSYA254D FSYA254D1 FSYA254D3 FSYA254R FS |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 21 A, 250 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 抗辐射，抗SEGR N沟道功率MOSFET
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
